Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the ...

SemiQ, a supplier of silicon carbide solutions for high performance applications, presents the new QSiC 1200V MOSFET.

Diodes (NASDAQ:DIOD – Get Free Report) and Nano Labs (NASDAQ:NA – Get Free Report) are both computer and technology companies, but which is the better stock? We will contrast the two businesses based ...

Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high-frequency applications ...

Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...

today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...

Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...