With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of SiC MOSFETs, while ensuring safe oxide ...

After SiC boules have been produced, single wafers can be obtained through a series of precise steps: ingot processing, followed by cutting, grinding, polishing, and cleaning of the wafers. Each phase ...

The SiC substrate production process is complex. It starts with silicon and carbon materials, which are inserted in a crucible. In the crucible, a boule is formed and then sliced into SiC substrates. ...