While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...
Forty-five experts from industry and academia met in the magnificent city of Toledo for the second workshop on efficient RF ...
The hybrid integration of GaN and silicon paves the way for high-efficiency, cost-effective 5G and millimetre-wave RF systems that provide a cutting-edge power density and scalability.
In CMOS transistor, the threshold is high and there exist a number ... the doubler as a function of the input power for different BG voltages. For the same RF input power, the output voltage obtained ...
Teledyne HiRel Semiconductors announces the availability of its latest rad-tolerant wideband 50 GHz RF switch, model ...
A landmark development led by researchers from the University of Glasgow could help create a new generation of diamond-based transistors for use in high-power electronics.
Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The inherent high ...
Combining low power with high dynamic performance ... to maintain consistent testbenches between the ASI and transistor levels. Progress in chip technology and Analog/Mixed-Signal and RF (A/RF) ...
DC to 50 GHz reflective single pole double throw RF Switch for aerospace and defense high-reliability applications ...