One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

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Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

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Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The inherent high ...

Soitec's photonics wafers are used for data center optical interconnections as higher communication speeds are needed. Soitec's manufacturing technology seems to be the only efficient and reliable way ...

In addition, it offers RF devices comprising GaN-based die, high-electron mobility transistors, monolithic microwave integrated circuits, and laterally diffused MOSFET power transistors for ...

Forty-five experts from industry and academia met in the magnificent city of Toledo for the second workshop on efficient RF ...

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