Some surprising conclusions came out of clamp-ring material tests, which took place in a plasma-etch equipment from Tek-Vac Industries Inc. Each process chamber (square boxes, left and right ...

In the semiconductor manufacturing process, etching equipment can be regarded as the core equipment, and ceramic cavities are ...

During the etching process, a piece of silicon is placed in a chamber and immersed within a thin layer of plasma, about two centimeters wide.

The PE-100 Convertible plasma system incorporates reactive ion etching and isotropic etching/cleaning technologies into a stand-alone benchtop system. The all aluminum chamber has over 240 in. 2 ...

But for Greg Delarge, president of Plasma Etch, that seems to be the case. His company is on track for another record year in 2011, selling a vacuum-based cleaning machine that uses ionized gas - also ...

AUSTIN, Texas — Tokyo Electron Ltd. (TEL) has improved the design of the SCCM (Super Capacitively Coupled Module) plasma etch chamber, the company claimed Monday (Dec. 13). The focus ring and ...

The PE-50 utilizes a substantial 6″W x 6″D x 4″H Aluminum vacuum chamber for accommodating substrates up to 5″x 5″ with 3” of height clearance. The system includes a 125W 50KHz RF power supply ...

In this article from TOFWERK, the pgaTOF is used to experiment with spontaneous and plasma Si etching in chemistry.

Lam Research Corp. (Nasdaq: LRCX) today introduced Akara®, a breakthrough innovation in plasma etch and the most advanced conductor etch tool available. Akara delivers novel plasma processing ...

In a conventional plasma etching chamber, the incident ions bombard the surface and etch holes normal to the surface; angled etching is not possible even when the surface is tilted.

"Cryo etch with the hydrogen fluoride plasma showed a significant increase in the etching rate compared to previous cryo-etch processes, where you are using separate fluorine and hydrogen sources ...

In all plasma etch reactors, the abrupt end of the wafer surface creates inherent electrical discontinuities at the edge region, forming voltage gradients that bend the plasma sheath. This, in turn, ...