Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type layer formation study for Ga 2 O 3 by employing Ni ion implantation with ...
The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers. In power electronics, minimizing switching losses and improving thermal ...
Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...
For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...
Abstract: Temperature dependence of the energy conversion efficiency of diamond pn junction betavoltaic cells was evaluated. We fabricated pseudo vertical diamond pn junction diode and characterized ...
Understanding the operating principles of a Gunn diode. Waveguide techniques for Gunn oscillator design. Key starting parameters for dual-tuned microwave Gunn oscillators. Despite being an older, ...
The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...
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