This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz waves for nanometer-scale resolution.

Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a ...

This paper discusses the design and the preliminary evaluation of an educational simulation of a P-N junction diode. The P-N diode is the most basic semiconductor device and exhibits a non-linear ...

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Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...