This article details photoluminescence techniques for evaluating GaN, highlighting their role in identifying defects and enhancing semiconductor quality.
Abstract: In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared ...
Abstract: This paper presents a new method for real-time in-situ temperature measurement and thermal resistance extraction of AlGaN/GaN high electron mobility transistors (HEMTs) based on Schottky ...
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