The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

PDF for physics from the official Punjab Board website. Access chapter-wise details for physics with the link to download the ...

Get here detailed ISC Board Class 12 Physics Syllabus chapter-wise, marking scheme, weightage, paper pattern and Download PDF.

A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...

An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructiv.

a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction. Ultrafast photocarrier transport due to the built-in electric field (drift current ...

Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a ...

A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and ...