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With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact ...

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem ...

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About This experiment belongs to Foundations in Semiconductor Physics IIITH. Full Name: PN Junction Diode ...

An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructive and non-contact manner by observing the THz ...

a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction. Ultrafast photocarrier transport due to the built-in electric field (drift current ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz waves for nanometer-scale resolution.

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