The performance of SiC radiation sensors were also evaluated across the temperature range of 25 °C to 450 °C to assess their functionality as detectors for fast ion losses in plasma diagnostics of ...

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High-Performance Heterojunction Pn Diodes Unveiled Chinese Academy of Sciences A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap ...

Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low On-resistance and high reliability.

The charge equations of the varicap diode are solved and show a discontinuity at the junction, hence showing the presence of deterministic chaos. After introducing the varicap diode and the diffusion ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...

In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a differential specific ...

PN diodes made from silicon, formed by the junction of the P and N doped Si, were the primary choice available for high-voltage applications before the development of SiC SBDs.