The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN ...

The performance of SiC radiation sensors were also evaluated across the temperature range of 25 °C to 450 °C to assess their functionality as detectors for fast ion losses in plasma diagnostics of ...

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core–shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of ...

Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and ...

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One promising option for enabling effective p-type doping in GaN and its related alloys is to introduce beryllium, possibly in the form of impurity complexes.

This interpretation is supported by analysis of the capacitance–voltage characteristics of the implanted p-n diodes, epitaxial p-n diodes fabricated with intentional p-Schottky contacts, and ...