PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in ...

The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN ...

Forming an optoelectronic device by monolithically integrating metal-oxide on the p-layer of regular p-n diode forming a three-terminal diode. As an emitter, it enables bias tee functionality and ...