A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Last week we covered diodes, specifically thermionic and PN junction diodes.But oh, there are more; and they’re special! One of the the most commonly used ‘specialty’ diode would have to be ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

In this module, you will learn how to analyze a p-n diode and how it differs from a Schottky diode. Specific items of interest are: a) The capacitance versus voltage relation, b) The diode current, ...

Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

A conventional PN junction diode may have a voltage drop between 0.6-1.7 V, whereas the Schottky diode voltage drop is 0.15V ñ0.45V. A lower voltage drop permits a higher switching speed as well ...

The typical drop of 0.3-0.6 V of a Schottky diode is better than that of a PN diode, and broadens the application space a bit, but it can still be too high for many applications. Although a Schottky ...