Finally, the power diode losses - both on-state losses and switching losses - are examined in a converter circuit, including a comparison of silicon p-n diodes and 4H-SiC Schottky diodes. Learning ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

It is known that the p-n diode can be the basis of an accurate thermometer for cryogenic temperatures up to about 200°C. A constant current is maintained through the diode and the voltage across it ...

The varactor diode capitalizes on the properties of the depletion layer of a p-n diode. Under reverse bias, the carriers in each region-holes in the p type and electrons in the n type-move away from ...

image: This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance.

Among the most widely used electronic structures, the p-n junction diode forms the basis of a number of technologies, including solar cells, light-emitting diodes, photodetectors, computers, and ...

Furthermore, the researchers demonstrated the potential of the three-terminal diode in optoelectronic logic gates (OELGs). By configuring the working voltage of the p‒n diode, the device can switch ...

Sponsored by Texas Instruments: Reverse-polarity-protection controllers, ideal-diode controllers, and integrated ideal diodes offer alternatives to Schottky diodes or discrete ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...