In this article, we propose a high-frequency model taking into account the series resistance of pseudo-vertical gallium nitride (GaN)-based p-i-n diodes. This model relies on the specific contact ...

Germanium lithium-ion drift p-i-n diodes with depletion depths up to 11 mm and active volume 6 cm3 have been fabricated from 10 ohm-cm, gallium-doped material using a high-power drift method. Diodes ...

With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN ...

The performance of SiC radiation sensors were also evaluated across the temperature range of 25 °C to 450 °C to assess their functionality as detectors for fast ion losses in plasma diagnostics of ...

A solar minigrid in a Goma neighborhood where almost everyone lacked access to electricity just five years ago is offering a ...

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core–shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of ...

Syllabus: The NTA has put the official JEE Main 2026 Syllabus online on their website: jeemain.nta.nic.in. If you're planning ...

Get here detailed ISC Board Class 12 Physics Syllabus chapter-wise, marking scheme, weightage, paper pattern and Download PDF.

Underpinning all this progress is the work of Hiroshi Amano and his colleagues, who made a pivotal breakthrough in GaN ...