In this article, we propose a high-frequency model taking into account the series resistance of pseudo-vertical gallium nitride (GaN)-based p-i-n diodes. This model relies on the specific contact ...

Germanium lithium-ion drift p-i-n diodes with depletion depths up to 11 mm and active volume 6 cm3 have been fabricated from 10 ohm-cm, gallium-doped material using a high-power drift method. Diodes ...

With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN ...