Utilizing IR PiFM, researchers can accurately analyze contaminants and defects under 20 nm, enhancing surface ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

A new photodetector design using platinum-infused diamond nanowires achieves record-breaking UV sensitivity and heat ...

A new technical paper titled “Domain Adaptation for Image Classification of Defects in Semiconductor Manufacturing” was published by researchers at Infineon Technologies, University of Padova and ...

Incorporating a dopant into a nanoparticle is a nontrivial proposition in view of the size dependent surface versus bulk energy considerations and the intrinsic proximity of the surface to the ...

A thorough investigation was conducted to determine the impact of outdoor airborne nanoparticles on defect generation during semiconductor manufacturing. Periods of elevated airborne particle levels, ...

Reference: “Weak Spots in Semiconductor Nanoplatelets: From Isolated Defects Toward Directed Nanoscale Assemblies” by Volodymyr Shamraienko, Rico Friedrich, Subakti Subakti, Axel Lubk, Arkady V.

Feb 25, 2025 Atomic-level nanosynthesis transforms defects into advanced materials Researchers gain critical insights into atomic-scale synthesis of cadmium selenide nanoplatelets, enabling systematic ...

Most semiconductor factories commonly use highly sensitive tools for wafer surface inspection to identify particles and defects. Usually, within the wafer inspection system, each wafer passes from the ...

The new analysis technique is described in Nature Photonics. Nanoscale architecture is crucial to modern semiconductors While the term “defects” might sound like these misfit atoms are a negative ...