To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...

It is made from a sandwich of three layers of semiconductor material: two layers of n-type material, which is a semiconductor doped with elements that provide extra electrons, and one layer of p-type ...

Ideal Power has been granted a patent for a method of operating a bi-directional double-base bipolar junction transistor (B-TRAN) in a power module. The method involves conducting load current, ...

Bipolar junction transistors (BJTs) are cornerstone components in the complex landscape of electronic circuits, conducting the operation of amplification and signal processing. A comprehensive grasp ...

Abstract: The parasitic npn bipolar in Silicon is a source of ESD and latchup failures in integrated circuit designs. This work develops an empirical and scalable model where both current density and ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

Transistors for RF/microwave applications are based on several different elements and compounds, with each substrate material bringing its own strengths and weaknesses. Not long ago, the choice for a ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...

It's difficult to take the audacious claims being made by Search For The Next (SFN), a Nottingham, England-based technology startup, seriously. That’s because, if they are true, it will force the ...