A MOS-gated bipolar transistor structure (called MGT), which consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration, is experimentally demonstrated in SiC in ...

The physical mechanism of the off-state avalanche breakdown process of SiC MOSFET which is composed of the active region and the termination region is analyzed by Sentaurus simulation and verified ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they ...