One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

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When a semiconductor includes both N-type and P-type materials, it is called a complementary metal-oxide semiconductor ... gap is the energy difference between the highest energy level or ...

This detector operates with ultra-low doping levels and thick epitaxial layers, allowing it to accurately measure high-energy particles ... detector based on a metal-oxide-semiconductor structure ...

That’s because our everyday experiences of the laws of physics are very different from how matter and energy behave at the atomic and subatomic level ... designed complementary ...

This detector operates with ultra-low doping levels and thick epitaxial layers, allowing it to accurately measure high-energy particles such as ... 4H–SiC thermal neutron detector based on a ...

United States Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States ...

Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan ...