One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

GCCI SOI-Tr has the potential for application as an ultralow power complementary metal-oxide-semiconductor (MOS). Owing to its BiMOS-like structure, GCCI SOI-Tr is compatible with the amplification ...

2024.3522482 Xiang-Dong Meng et al, A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure ... performance of Ni/SiO2/4H-SiC MOS capacitors, Nuclear Instruments ...

Abstract: We describe a prospective strategy for reading the encyclopedic information encoded in the genome: using a nanopore in a membrane formed from a metal-oxide semiconductor (MOS)-capacitor to ...

2024.3522482 Xiang-Dong Meng et al, A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure ... on radiation detection performance of Ni/SiO2/4H-SiC MOS capacitors, ...

When a semiconductor includes both N-type and P-type materials, it is called a complementary metal-oxide semiconductor (CMOS, pronounced "sea-moss"). Many semiconductors start their lives as ...

Two main sensor types are used: CCD (Charge-Coupled Device) and CMOS (Complementary Metal-Oxide-Semiconductor). CCD sensors employ a complex capacitor structure for charge transfer and are known for ...