In this work, p-GaN gate HEMTs with a semi-wraparound metal-insulator-semiconductor (MIS) gate are investigated. By using SiN and gate metal to surround the p-G ...

A new palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst achieved over 91% selectivity when converting carbon dioxide to ...

Two different metal oxides, namely, mesoporous nickel oxide and nickel cobaltite, are accordingly prepared. Figure 1 a,c presents the mesoporous NiO nanosheets, where the pores are observed at ...

This paper describes the development work of controlling the U-shape profiler during laser grooving in Complementary Metal-Oxide-Semiconductor (CMOS) low-k wafer technology. The effects of laser ...

IGBT and Super Junction MOSFET Market was valued at $11.1 billion in 2021, is projected to reach $33.1 billion by 2031, grow at a CAGR of 11.4% from 2022-2031. The industrial robotics and electric ...