A team of German researchers has developed a miniaturized solar cell experiment for nanosatellites. It was used to test ...

A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...

SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice ...

Manufacturing is something the semiconductor industry wanted to forget about for decades. It’s now front and center and ...

Of course with Nelson a transistor man well versed in high-power class A behemoths bad for most backs, his FirstWatt side ...

Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

Additionally, the auxiliary transistors can flexibly adjust their operating modes according to the crosstalk patterns in the gate-source driver circuits without the need for extra control signals or ...

Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, ...