The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si ...

A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact ...

Solution A naive solution is the following: since the Dirac pulse has an infinitesimal duration and reverse biases the diode, the circuit will be crossed by the reverse saturation current for an ...

The diode works like a typical silicon PN junction diode in forward-biased conditions but can handle reversed voltage up to a certain threshold. The formula RS = (Vin – VZ) / Iz is used to determine ...

The simulation of the DC type between 0 V and 20 V shows the output voltage on the resistance R1 dependent on the battery voltage. In this mode, of course, a normal diode does not conduct current. But ...

The point where these two regions meet is termed the 'p-n junction'. The Role of the p-n Junction The p-n junction is the heart of a diode's operation. When these two semiconductor materials are ...