The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Get here detailed ISC Board Class 12 Physics Syllabus chapter-wise, marking scheme, weightage, paper pattern and Download PDF ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package. "STGWA30IH160DF2 IGBT combines ...

Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact ...

Syllabus: The NTA has put the official JEE Main 2026 Syllabus online on their website: jeemain.nta.nic.in. If you're planning ...

Ultrashallow gated diodes have been fabricated using 500-eV boron-ion implantation into both Ge-preamorphized and crystalline silicon substrates. Junction depths following rapid thermal annealing (RTA ...

OKI (TOKYO: 6703) , in collaboration with NTT Innovative Devices Corporation (Headquarters: Kanagawa Prefecture; President & CEO: Hidehiro Tsukano; "NTT Innovative Devices" hereinafter), has ...

An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si ...