EPC Space has announced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power space applications.

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been ...

A particle that can be used to create an active magnetic metamaterial has been designed using an FET transistor loaded in its gate by a conducting ring and in its source by a parallel resonance ...

Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a ...

Forum Energy Technologies, Inc. (FET) key stats comparison: compare with other stocks by metrics: valuation, growth, profitability, momentum, EPS revisions, dividends ...