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“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...
Abstract: The influence of p-type and n-type doping on the optical characteristics of a quantum-dot semiconductor optical amplifier (SOA) is studied using a rate equation model that takes into account ...
The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier ...
Au/MgZnO/nanolayered ZnO (Ga-doped)/In MIS (metal–insulator–semiconductor) structure UV detectors are fabricated by the PLD (pulsed laser deposition) method, and the effect of different thickness ...
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