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Defects in single-crystal indium gallium zinc oxide could fix persistent display instability
Many displays found in smartphones and televisions rely on thin-film transistors (TFTs) made from indium gallium zinc oxide ...
IEEE6d
Intrinsic Difference Between 2-D Negative-Capacitance FETs With Semiconductor-on-Insulator and Double-Gate Structures - IEEE Xplore
With the aid of an analytical and general model, this paper investigates the intrinsic difference in the negative-capacitance (NC) effect and design space between semiconductor-on-insulator (SOI) and ...
C&EN13d
Intrinsic Parameters for the Structure Control of Nonionic Reverse Micelles in Styrene: SAXS and Rheometry Studies | Langmuir - ACS Publications
Shape, size, and internal structure of nonionic reverse micelle in styrene depending on surfactant chain length, concentration, temperature, and water addition have been investigated using a ...
C&EN14d
Intrinsic Optical and Electronic Properties from Quantitative Analysis of Plasmonic Semiconductor Nanocrystal Ensemble Optical Extinction - ACS Publications
The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier ...
Scientific Research Publishing15d
van de Ven, G., van den Bosch, R.C.E., Verolme, E.K. and de Zeeuw, P.T. (2006) The Dynamical Distance and Intrinsic Structure of the Globular Cluster
ABSTRACT: In modern astrophysics, it is believed that galaxies are not expanding. The authors of the article set out to investigate the motion of Globular Clusters (GC) of the Milky Way relative to ...
IEEE16d
Analysis of the optical gain characteristics of semiconductor quantum-dash materials including the band structure modifications due to the wetting layer - IEEE Xplore
We present a numerical model for the calculation of the opto-electronic properties of a semiconductor InAs-InAlGaAs quantum dash active material including the presence of the wetting layer (WL), ...