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Discovery in quantum materials could make electronics 1,000 times faster
Researchers at Northeastern University have discovered how to change the electronic state of matter on demand, a breakthrough ...
IEEE7d
A Dopingless FET With Metal–Insulator–Semiconductor Contacts
By adopting the charge-plasma concept, dopingless FETs with metal-semiconductor and metal-insulator-semiconductor (MIS) contacts in parallel at the source/drain (SD) have been studied in this letter.
C&EN10d
Structural Stability and Variable Dielectric Constant in Poly Sodium 4-Styrensulfonate Intercalated Graphite Oxide | The Journal of Physical Chemistry C - ACS Publications
The structural stability and dielectric constant of poly sodium 4-styrensulfonate (PSS) intercalated graphite oxides (GOs) were investigated. We found that the interlayer distance of a PSS-treated ...
Yahoo Finance22d
High-K Dielectric Material Market Size to Hit USD 3.75 Billion by 2032, Due to Demand from the Semiconductor and Electronics Industries | SNS Insider - Yahoo Finance
HighK Dielectric Material Market growth is driven by miniaturization in electronics, 5G rollout, EV and IoT adoption, and demand for sustainable highperformance insulation.Austin, June 09, 2025 ...
IEEE22d
Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells - IEEE Xplore
Metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells are promising devices for photovoltaic energy conversion due to the ease of junction fabrication. In order to improve the ...
C&EN29d
Chemical Bonding-Induced Low Dielectric Loss and Low Conductivity in High-K Poly (vinylidenefluoride-trifluorethylene)/Graphene Nanosheets Nanocomposites - ACS Publications
Blending high-permittivity (εr) ceramic powders or conductive fillers into polymers to form 0-3-type composites has been regarded as one of the most promising processes to achieve ...