Therefore, inductor-based SRs will often end up showing an average efficiency of between 80% and 85% over the higher decade of the output current range (10% to 100% of IOUT) as shown on figure 4. The ...

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

To Address the Latest Trends in Power Electronics, Company to Showcase MaxSiC™ Series SiC MOSFETs Alongside Broad Portfolio ...

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...

Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied ...

World's FIRST and ONLY Atomic Mass Filter Technology "AMF"(patent pending) by Retired Technologist Michael E Thomas. Why has ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

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After hours: March 13 at 6:48:19 PM EDT Loading Chart for SXI ...