Scientists in Spain have analyzed the impact of temperature and spectral conditions on III-V solar cells employed in concentrator photovoltaic modules. They claim to have assessed the cell ...

The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...

The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...

The engineers have crafted the III-V material into one-square-inch versions of solar cells in the laboratory, and achieved 17 percent efficiency at converting light to electricity.

III–V materials are key for making semiconductors with adjustable bandgaps, enabling solar cells to capture a wide range of light, from ultraviolet to mid-infrared.

But III-V materials may not be ready, or too difficult to implement, at 7nm. At 5nm, though, finFETs could hit the wall, prompting the need for a next-generation transistor type. The leading ...

Researchers improve performance of III-V nanowire solar cells on graphene by Rick Kubetz, University of Illinois at Urbana-Champaign A dense array of nanowires was grown directly on graphene.

The III-V materials are being considered as eventual successors to silicon because they are better conductors of electrons. Initially, the materials are expected to be used alongside silicon.

III-V compound semiconductors, so called for their position in the periodic table, such as indium gallium arsenide (InGaAs) can reach those higher frequencies because of how fast electrons can ...

Using low-bandgap III-V materials such as InAsSb in nanostructured arrays to limit potential loss mechanisms, a 25x improvement in mass specific power and ten thousands times decrease in volume from a ...