(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

The approach, termed ‘germanium on nothing’, could enable the cost effective, high volume production of PV cells based on III-V materials such as gallium arsenide. Cells made from such ...

The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...

Gallium arsenide (GaAs) and other III-V materials – named after the groups in the periodic table they belong to – are among the best known in terms of efficiency potential for solar cells.

On the other hand, III–V materials have been used in communication and optoelectronic products for a long time. They have, in general, much higher electron mobility and conductivity than silicon ...

From integrated photonics to quantum information science, the ability to control light with electric fields -- a phenomenon known as the electro-optic effect -- supports vital applications such as ...

For that reason, the direct epitaxial growth of high-quality III-V optical gain materials selectively on large-size silicon photonics wafers remains a highly sought-after objective. The large ...

Prior to joining the SN, his work focused on the development, growth, characterization, and integration of III-V materials by metalorganic vapor phase epitaxy (MOVPE). He has over 11 years of ...

Basically, an MOCVD system deposits thin single crystal layers on the surface of a device. MOCVD is generally used to deposit III-V compound semiconductor materials, such as indium phosphide (InP), ...