A team of scientists from Philips and the Kavli Institute of Nanoscience in Delft, the Netherlands, has successfully grown III-V semiconductor nanowires on germanium and silicon substrates. III-V ...
“Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of ...
In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...
Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for efficient integration of III-V compound semiconductor devices and silicon, ...
A research group from Spain has investigated the impact of temperature and spectral conditions on III-V solar cells operating under ultra-high concentration (UHC) conditions. Gallium arsenide (GaAs) ...
An international research group has utilized through-substrate-vias to create 3D interconnections in III-V solar cells with a triple-junction architecture. The novel cell design was found to have a ...
The study was selected as cover of the journal Laser & Photonics Reviews. Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results