During Q4 2024, KnowMade's SiC Patent Monitor showed 900 new patent families and 400 newly granted patents. This period also ...

Abstract: Effective condition monitoring (CM) technology ensures the safe operation of insulated gate bipolar transistors (IGBTs). Most CM methods for IGBTs focus on extracting electrical, thermal, ...

The company has made substantial headway in SiC technology, including the recent launch of the world’s first n-type 300-mm (12-inch) SiC substrate at the SemiconEurope 2024 trade fair in Munich, ...

Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China ...

Polar will become the Only Foundry in the U.S. Capable of High-Voltage Power BCD Semiconductor Wafer Production for Aerospace & Defense and Commercial End Markets. BLOOMINGTON, Minn., January 15 ...

Polar will become the Only Foundry in the U.S. Capable of High-Voltage Power BCD Semiconductor Wafer Production for Aerospace & Defense and Commercial End Markets. Polar Semiconductor (“Polar ...

Polar's semiconductor manufacturing facilities operate with state-of-the-art automation systems to manufacture Integrated Circuit (BCD, BiCMOS) and Discrete (MOSFET, IGBT) 8-inch silicon wafers ...

The GaN HEMT is still about 20 percent more expensive than the silicon IGBT, but if the former were to be produced using 300 mm wafers, cost-parity with silicon might be within reach, thanks to the ...