NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

However, these power-handling advantages come at a cost. SiC power MOSFETs can cost up to 3X more than the IGBTs currently used throughout the EV. The price difference is driven by the complexity ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off, causing malfunctions such as short ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

On this front, Infineon Technologies offers a wide range of automotive-qualified isolated gate-driver ICs covering the usage of MOSFET, IGBT, and SiC technologies in applications up to 1,200 V.

Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off ...