The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...

While GaN semiconductors have been in use since the 1990s, primarily in light-emitting diodes (LEDs), this advancement in larger wafer technology is a major step forward to bring both increased ...

Infineon Technologies AG announces its 200 mm silicon carbide (SiC) manufacturing capability, with initial product releases ...

and his colleagues conducted an experiment in which they patterned deposited metallic Mg thin films on GaN wafers and heated ...

Infineon Technologies has announced that it has made significant progress on its 200 mm silicon carbide (SiC) roadmap.

Additionally, the development of vertical GaN-based trench MOSFETs on free-standing GaN wafers has shown excellent breakdown voltage and threshold voltage characteristics, further solidifying GaN ...

One of the exhibitors at this week’s SPIE Photonics West event in San Francisco, the CPFC is a pure-play III-V compound semiconductor wafer foundry with expertise in InP, gallium arsenide (GaAs), and ...

We are thrilled to receive this initial production purchase order, signaling their commitment to move forward with volume production wafer level burn-in of their GaN devices on our FOX-XP platform.

Taiwan has announced that its domestically developed high-frequency gallium nitride (GaN) 8-inch process demonstrates greater ...