The race beyond silicon is already underway. As these emerging semiconductor materials become more viable, they will enable ...

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement Joint Development Agreement ...

Ezgi Dogmus, activity manager, Compound Semiconductors at Yole Group says: "Industry feedback suggests that total announced ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

Mazda Motor Corporation and Rohm have begun joint development of automotive components using GaN power semiconductors. Since ...

Wolfspeed, Inc.’s WOLF share price has dipped by 42.94%, which has investors questioning if this is right time to buy.

For context, GaN material is deposited or grown on top of another silicon or silicon carbide in a process called epitaxy to develop the wafers. However, the path to building AGNIT had multiple ...

This breakthrough GaN/SiC technology is a vital component for next-generation defense, aerospace, and sustainable energy ...

STMicroelectronics (STM) and Innoscience announce the signature of an agreement on GaN technology development and manufacturing, leveraging the ...