Electronic Design4d
Dynamically Testing WBG Power Semiconductors Down to the Die
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
DIGITIMES4d
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
DRDO’s solid state physics laboratory develops Silicon Carbide and GaN Technology for Next-Gen applications
This breakthrough GaN/SiC technology is a vital component for next-generation defense, aerospace, and sustainable energy ...
inc425mon
Can AGNIT’s GaN Wafers Become India’s Edge In The Global Chip Market?
For context, GaN material is deposited or grown on top of another silicon or silicon carbide in a process called epitaxy to develop the wafers. However, the path to building AGNIT had multiple ...
Nasdaq1mon
Navitas Semiconductor to Showcase Latest GaN and SiC Innovations at APEC 2025
Navitas Semiconductor will showcase GaN and SiC technology advancements at APEC 2025, emphasizing innovative power solutions for data centers and EV applications. Navitas Semiconductor ...