This article details photoluminescence techniques for evaluating GaN, highlighting their role in identifying defects and enhancing semiconductor quality.

In diamonds (and other semiconducting materials), defects are a quantum sensor's best friend. That's because defects, essentially a jostled arrangement of atoms, sometimes contain electrons with an ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Gallium Phosphide (GaP) epitaxy on silicon substrates represents a critical frontier in semiconductor heterointegration, combining the superior optoelectronic properties of III–V materials with ...

Without ultra-purity, we cannot achieve the performance needed in today's world. When wafers or electronic components become ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...