Gallium nitride (GaN) is a promising semiconductor material that outperforms silicon-based devices. However, optimal performance requires high-quality GaN. Photoluminescence (PL) spectroscopy is a non ...

Rio Tinto said on Monday the Government of Canada has conditionally approved a non-repayable ​contribution of up to C$18.95 ...

Lithium-ion batteries are ubiquitous in consumer electronics such as cellphones and in electric vehicles, but the surrounding ...

Cornell researchers have used high-resolution 3D imaging to detect, for the first time, the atomic-scale defects in computer chips that can sabotage their performance. The imaging method, which was ...

Future devices will continue to probe the frontier of the very small, and at scales where functionality depends on mere atoms, even the tiniest flaw matters. Researchers at Rice University have shown ...

A team from China has strengthened the case for manufacturing GaN HEMTs by plasma-assisted MBE by producing simple devices that can block more than 2.5 kV. While MOCVD dominates the manufacture of GaN ...

Industry leaders team up to develop next-generation crystal growth capability WICHITA, KS, UNITED STATES, February 15, ...

The variety of compositions available gives designers many options to achieve the specific properties they need. Indium tin ...

Without ultra-purity, we cannot achieve the performance needed in today's world. When wafers or electronic components become ...

The Global 2D Materials Market is projected to grow at a CAGR of 15.8% from 2026 to 2033, according to a new report published by ...

Abstract: Advancements in large multimodal models (LMMs) for text and image understanding have provided a new paradigm for semiconductor intelligent manufacturing. However, due to the ...