Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

A new report from RFC Ambrian lays out the commanding position China has taken in the gallium market and the ... Read More ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

TriQuint Inc. was a leader in developing advanced semiconductor materials like gallium arsenide and gallium nitride. They ...

Fraunhofer ISE researchers say their newly fabricated gallium arsenide substrates (InP-on-GaAs wafers) can replace prime indium phosphide wafers and offer a scalable pathway to lower costs.

CFO Gary Fischer cited a "disappointing" negative 6.1% non-GAAP gross margin, attributing it to yield issues in semi-insulating gallium arsenide wafers, unfavorable revenue mix, and lower-than ...

A 3D drawing of a wafer-scale test configuration depicting light radiated upwards by the left facet and collected by a multimode fibre and three electrical probes driving the nano-ridge laser and ...

GlobalWafers' fourth-quarter revenue grew 3% sequentially as some customers started restocking, but its parent Sino-American Silicon's sales dipped 1% due to slowdown in gallium arsenide operations.

The now-obsolete device is a monolithic microwave integrated circuit (MMIC) built on a gallium arsenide substrate rather than silicon, and attenuates DC to 6-GHz signals in 64 steps down to -31.5 dBm.

Includes Profiles of Industry Giants Sumitomo, IntelliEPI, IQE, VPEC, and LandMark Optoelectronics CorporationDublin, Jan. 21, 2025 (GLOBE NEWSWIRE) -- The "Gallium Arsenide EPI Wafer Global ...

The Gallium Arsenide (GaAs) EPI wafer market is expected to see steady growth driven by the increasing demand for high-performance semiconductor applications, including RF (Radio Frequency) devices, ...

De Koninck et al. 5 deposited the semiconductor gallium arsenide (GaAs) directly onto a silicon wafer exposed at the base of trenches (1–2 millimetres in length, 300 nanometres deep and up to ...