Abstract: To improve the complex process and low accuracy of traditional small signal modeling, a S-parameters model based on the long short term memory neural network for the gallium arsenide ...

Infineon Technologies AG has announced progress in its scalable gallium nitride (GaN) semiconductor manufacturing using ...

Recent supply chain rumors have indicated that TSMC will withdraw from the gallium nitride (GaN) market, a third-generation ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

A new report from RFC Ambrian lays out the commanding position China has taken in the gallium market and the ... Read More ...

The company’s solar arrays for space feature high-efficiency gallium arsenide (GaAs) triple junction metal wrap through (MWT) micro-cells, with a power conversion efficiency of 30% at the wafer level, ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

Establishing a supply chain capable of delivering the thousands of wafer-starts per week needed to keep pace with anticipated ...

However, these wafers exhibit rigidity without mechanical flexibility, limiting their applications in flexible electronics. Here, we propose a new approach to fabricate 1.5 in. flexible functional ...

TriQuint Inc. was a leader in developing advanced semiconductor materials like gallium arsenide and gallium nitride. They ...

IISc-incubated startup AGNIT Semiconductors is developing and manufacturing GaN-based semiconductors, challenging the country’s Silicon-based growth.

In this letter, a dual-band bandpass filter (BPF) is proposed with a large frequency ratio, utilizing gallium arsenide (GaAs)-based integrated passive device (IPD) technology. To address the challenge ...