Molybdenum disulfide (MoS2) was synthesized via a chemical vapor deposition (CVD) system and transferred to the gate of the MgZnO/CdZnO (MCO) HEMT using an energy-assisted wet transfer method, ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

“I must correct that,” said DPM Gan, who is also Trade and Industry Minister. Singapore has developed “quite an elaborate” code of conduct for how it should develop and deploy AI in an ...

When you first enter a new world, you can either spawn near a structure or find one while exploring any of the three dimensions. While finding some can be quite easy, others are extremely hard to ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

a 20-nm AlGaN barrier and a 2-nm GaN cap layer. TCAD-Sentaurus simulations were performed on this structure. The simulations were calibrated using empirical data obtained from fabricated HEMT devices.