While CMOS may be synonymous with the manufacture of silicon ICs, it’s a versatile process can also be applied to the ...

The researchers used an etch-and-release scheme to fabricate red (∼ 675 nm) LEDs based on conventional GaAs–InGaP semiconductors on a thin sacrificial layer of AlGaAs deposited on a GaAs wafer.

The company’s solar arrays for space feature high-efficiency gallium arsenide (GaAs) triple junction metal wrap through (MWT) micro-cells, with a power conversion efficiency of 30% at the wafer level, ...

The application of InP on GaAs is challenging because defects occur during the growth of the InP, which can degrade the performance of the final device. The scientists were able to avoid this by ...

“As Canada continues to strengthen ties with reliable partners, we are proud to partner with CSA Catapult and C2MI to strengthen the semiconductor industry both in Canada and the United Kingdom. This ...

TriQuint Inc. was a leader in developing advanced semiconductor materials like gallium arsenide and gallium nitride. They ...

This paper describes the design and realization of a 60GHz microwave monolithic integrated circuit (MMIC) low-noise amplifier (LNA) based on commercial GaAs metamorphic high electron mobility ...

We improved dry etching process by introducing 3-steps etching and 3 layers of quantum dots for fabricating the CirD laser that will be used for intra-chip optical communications. Excellent lasing ...

Critical mineral strategies are likely to lead to further investment in exploration, refining and processing, thus reshaping ...