We read with great interest the published results of the RADIOSA trial by Giulia Marvaso and colleagues.1 This well designed ...

Abstract: Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated to the capture and emission of charge carriers by a single trap located in the gate ...

As semiconductor device geometries continue to shrink, the corresponding voltage applied across the processed devices must also be reduced. Therefore reference voltages used in integrated circuits ...