Abstract: The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model ...

ROHM has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional forward voltage (V F )/reverse ...

A new study marks a significant step forward in positioning synthetic polymers as an alternative to expensive, unsustainable ...

Engineers from North Carolina State University, Adroit Materials and Poland’s Institute of High-Pressure Physics have reduced ...