The deliberate implantation of materials using focused ion beams (FIB) is a powerful and versatile approach to engineering materials at the nanoscale. This technology enables precise doping of ...
The Hitachi FB-2000A FIB uses a beam of focused high-energy (30 kV) gallium ions to remove material in a very controlled manner from inorganic specimens. The FB-2000A is a single beam system; that is, ...
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