First-principles calculations shed light on semiconductor defects. The third rule describes how strain changes the position of the “pinning” Fermi level. This is an intrinsic effect occurring in ...

They calculated the quasi-Fermi levels in molecular junctions applying an ab initio approach.Semiconductor companies are struggling to develop devices that are mere nanometers in size, and much of ...

Duration: 3 hours. In this module, we will cover carrier statistics. Topics include Currents in semiconductors, Density of states, Fermi-Dirac probability function, Equilibrium carrier concentrations, ...

The work by Yuanyue Liu, Paul Stradins, and Su-Huai Wei, "Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier," appears in the new ...

A new publication from Opto-Electronic Advances, 10.29026/oea.2023.230094  discusses Ferroelectric modulation of the Fermi level of graphene oxide to enhance SERS response.

Fermi America and Texas Tech have announced a 5,800-acre AI campus near Amarillo, powered by 11 gigawatts and creating jobs ...

A new ultra-thin electrode material: A step closer to next-generation semiconductors Dramatically improved the performance of 2D semiconductor devices by supressing the Fermi-level pinning phenomenon.

New technical paper titled “Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning” from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, ...

E F,sc is the Fermi level of the semiconductor. On contact, electrons flow from the n-type semiconductor into the metal to equilibrate their initially different Fermi levels.