By Sonia Fernandez In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled ...
D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.
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China's new 2D transistor could soon be used to make the world's fastest processorsAdvances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor.
ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...
Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.
AOS launches two new advanced surface-mount package options for its high power MOSFET portfolio, aimed at high-current ...
EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.
The inverters use a silicon carbide metal-oxide-semiconductor field-effect transistor for high power conversion capability.
SMA America is expanding its large-scale storage portfolio with the Sunny Central Storage UP-S battery inverter, now available in the U.S. Designed for ...
In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...
In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...
The new bismuth-based transistor could revolutionize chip design, offering higher efficiency while bypassing silicon’s limitations.
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