This groundbreaking technique, also referred to as MacEtch or MACE, provides ultra-high anisotropy etching that’s free from damage. It is an innovative approach that effectively addresses the ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
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Plasma technique doubles etch rate for 3D NAND flash memoryHowever, the process, known as reactive ion etching, isn't fully understood and could be improved. One recent development involves keeping the wafer––the sheet of semiconductor material to be ...
Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND ...
Tokyo Electron (TEL) has reaffirmed its positive annual outlook and announced plans to invest JPY104 billion (approx. US$685 ...
AlixLabs AB, a Swedish semiconductor startup specialising in Atomic Layer Etching (ALE), announces that it has entered a ...
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