This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

With higher efficiency and lower costs, perovskite–silicon tandem cells mark a breakthrough in solar tech. Can they truly ...

A new terahertz technique reveals nanometer-scale PN junction depths in silicon chips, enabling faster, non-contact ...

High precision absolute measurements of the ionization energy (ε) for alpha particles and electrons have been made in two thick high purity silicon guard ring detectors between 100 K and 250 K. At a ...

Figure 1. (a) Energy band diagrams of the Schottky junction with the contact of Au and p-Si (left) or n-Si (right). (b) Hot-hole (left) and hot-electron (right) initial energy distribution upon ...

We propose a new computational scheme for calculating the phonon band diagrams of molecular crystals. In conventional computational models, the vibrational unit is typically an atom, which leads to ...

We report first-principle electronic-structure calculations that clarify roles of cross-sectional morphology in electronic structures of Si nanowires (SiNWs) with the dimension ranging from 3 nm to 6 ...