Compoundsemiconductor.net6d
Scrutinising traps in GaN MOS-HEMTs
One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...
Compoundsemiconductor.net6d
SiC MOSFETs: Understanding the benefits of plasma nitridation
The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2, and post-deposition annealing – reduces the interface state density near ...
Frontiers6d
Higher order neural processing with input-adaptive dynamic weights on MoS
Exploiting the dual-gated MoS 2 memtransistors for neural processing ... quadratic multiplications within a memtransistor crossbar are ∼ 1.5 × more energy efficient than in memristors. Furthermore, by ...
IEEE5d
High Stability Single-Port Dual Band Microwave Sensor Based on Interdigital Capacitor Structure with Asymmetry Branch Feedline
Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=6287639 ...
C&EN3d
Toward Understanding the Built-in Field in Perovskite Solar Cells through Layer-by-Layer Surface Photovoltage Measurements
Department Structure and Dynamics of Energy Materials, Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany ...
C&EN4d
Charge Storage Mechanism Analysis of Sustainable Hybrid Redox-Active Capacitors Using Either Liquid or Solid-State Electrolytes
POLYMAT, Applied Chemistry Department, Faculty of Chemistry, University of the Basque Country UPV/EHU, Manuel Lardizabal Pasealekua, 3, 20018 San Sebastián, Spain ...